SI7905DN-T1-E3【PDF 2/13 页】MOSFET DUAL P-CH D-S 40V 1212-8

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

Si7905DN

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient a, b

Maximum Junction-to-Case (Drain)

t ?? 10 s

Steady State

R thJA

R thJC

38

4.5

50

6

°C/W

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 94 °C/W.

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

? V DS /T J

? V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 40

- 44

4.3

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

-1

-3

V

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 20 V

V DS = - 40 V, V GS = 0 V

V DS = - 40 V, V GS = 0 V, T J = 55 °C

V DS ? - 5 V, V GS = - 10 V

- 10

± 100

-1

- 10

nA

μA

A

Drain-Source On-State Resistance a

Forward Transconductance a

R DS(on)

g fs

V GS = - 10 V, I D = - 5 A

V GS = - 4.5 V, I D = - 4 A

V DS = - 15 V, I D = - 5 A

0.048

0.065

25

0.060

0.089

?

S

Dynamic b

Input Capacitance

C iss

880

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 20 V, V GS = 0 V, f = 1 MHz

100

80

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 20 V, V GS = - 10 V, I D = - 5 A

V DS = - 20 V, V GS = - 4.5 V, I D = - 5 A

20

11

3

30

16.5

nC

Gate-Drain Charge

Q gd

5

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

Fall Time

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

Fall Time

R g

t d(on)

t r

t d(off)

t f

t d(on)

t r

t d(off)

t f

f = 1 MHz

V DD = - 20 V, R L = 5 ?

I D ? - 4 A, V GEN = - 4.5 V, R g = 1 ?

V DD = - 20 V, R L = 5 ?

I D ? - 4 A, V GEN = - 10 V, R g = 1 ?

5.7

42

100

24

11

6

13

26

10

8.6

65

150

40

17

10

20

40

16

?

ns

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current a

I S

I SM

T C = 25 °C

-6

- 20

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I F = - 4 A

I F = - 4 A, dI/dt = 100 A/μs, T J = 25 °C

- 0.8

20

15

14

16

- 1.2

30

23

V

ns

nC

ns

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 69920

S11-2187-Rev. C, 07-Nov-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

SI7913DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK

SI7922DN-T1-GE3 MOSFET DL N-CH 100V PPAK 1212-8

SI7923DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK

SI7940DP-T1-E3 MOSFET 2N-CH 12V 7.6A 8SOIC

SI7945DP-T1-GE3 MOSFET DL P-CH 30V PPAK 8-SOIC

SI7948DP-T1-GE3 MOSFET N-CH DL 60V PWRPAK 8-SOIC

SI7956DP-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC

SI7958DP-T1-GE3 MOSFET DL N-CH 40V PPAK 8-SOIC

相关代理商/技术参数

SI7905DN-T1-GE3 功能描述:MOSFET 40V 6.0A 20.8W 60mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI7906 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator

SI7906A 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator

SI7908 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator

SI7908A 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator

SI7909 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:3-Terminal Negative Voltage Regulator

SI7909DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET

SI7909DN-T1-E3 功能描述:MOSFET 12V 7.7A 2.8W 37mohm @ 4.5V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube